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| HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z (Previous: ADE-208-121A) Rev.2.00 Jan.06.2004 Features * Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. * Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. * Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. * Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS-L Series Mark Type No. Package Code MHD Pin Arrangement B 7 2 1 2 Type No. Cathode band 1. Cathode 2. Anode Rev.2.00, Jan.06.2003, page 1 of 6 HZS-L Series Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 -55 to +175 Unit mW C C Electrical Characteristics (Ta = 25C) Zener Voltage VZ (V)* Type HZS6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS7L A1 A2 A3 B1 B2 B3 C1 C2 C3 Note: Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 1 Reverse Current Test Condition IR (A) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd () Max 150 Test Condition IZ (mA) 0.5 Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 IZ (mA) 0.5 80 0.5 60 0.5 0.5 1 3.5 60 0.5 1. Tested with DC. Rev.2.00, Jan.06.2003, page 2 of 6 HZS-L Series Zener Voltage VZ (V)* Type HZS9L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS11L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS12L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS15L 1 2 3 HZS16L 1 2 3 Note: Min 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3 1 Reverse Current Test Condition IR (A) Max 1 Test Condition VR (V) 6.0 Dynamic Resistance rd () Max 60 Test Condition IZ (mA) 0.5 Max 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 IZ (mA) 0.5 0.5 1 8.0 80 0.5 0.5 1 10.5 80 0.5 0.5 1 13.0 80 0.5 0.5 1 14.0 80 0.5 1. Tested with DC. Rev.2.00, Jan.06.2003, page 3 of 6 HZS-L Series Zener Voltage VZ (V)* Type HZS18L Grade 1 2 3 HZS20L 1 2 3 HZS22L 1 2 3 HZS24L 1 2 3 HZS27L 1 2 3 HZS30L 1 2 3 HZS33L 1 2 3 HZS36L 1 2 3 Min 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 1 Reverse Current Test Condition IR (A) Max 1 Test Condition VR (V) 15.0 Dynamic Resistance rd () Max 80 Test Condition IZ (mA) 0.5 Max 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 IZ (mA) 0.5 0.5 1 18.0 100 0.5 0.5 1 20.0 100 0.5 0.5 1 22.0 120 0.5 0.5 1 24.0 150 0.5 0.5 1 27.0 200 0.5 0.5 1 30.0 250 0.5 0.5 1 33.0 300 0.5 Notes: 1. Tested with DC. 2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L Rev.2.00, Jan.06.2003, page 4 of 6 HZS-L Series Main Characteristic 10-2 HZS12B2L HZS20-2L 10-3 Zener Current IZ (A) HZS16-2L HZS24-2L HZS6B2L HZS9B2L HZS30-2L 10-4 10-5 10-6 10-7 10-8 0 5 10 15 20 25 30 35 HZS36-2L 40 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Zener Voltage Temperature Coefficient Z (mV/C) Zener Voltage Temperature Coefficient Z (%/C) 0.10 0.08 0.06 0.04 mV/C 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 %/C 50 40 30 20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 500 l 2.5 mm 3 mm Power Dissipation Pd (mW) 400 Printed circuit board 100 x 180 x 1.6t mm Quality: paper phenol 300 l = 5 mm 200 l = 10 mm (Publication value) 100 0 0 50 100 150 200 Ambient Temperature Ta (C) Fig.3 Power Dissipation vs. Ambient Temperature Fig.2 Temperature Coefficient vs. Zener voltage Rev.2.00, Jan.06.2003, page 5 of 6 HZS-L Series Package Dimensions As of January, 2003 Unit: mm 26.0 Min 2.4 Max 26.0 Min 0.4 2.0 Package Code JEDEC JEITA Mass (reference value) MHD Conforms -- 0.084 g Rev.2.00, Jan.06.2003, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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